15 results
The Chinese version of the brief assessment of cognition in schizophrenia: Data of a large-scale Mandarin-speaking population
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- Journal:
- European Psychiatry / Volume 41 / Issue S1 / April 2017
- Published online by Cambridge University Press:
- 23 March 2020, p. S334
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Generalised Holography Meets Coherent Diffractive Imaging
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- Microscopy and Microanalysis / Volume 20 / Issue S3 / August 2014
- Published online by Cambridge University Press:
- 27 August 2014, pp. 374-375
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- August 2014
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Current Developments of Scanning Confocal Electron Microscopy in a Double Aberration-Corrected Transmission Electron Microscope
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- Microscopy and Microanalysis / Volume 18 / Issue S2 / July 2012
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- 23 November 2012, pp. 532-533
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- July 2012
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Raman study on dislocation in high Al content AlxGa1−xN
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- The European Physical Journal - Applied Physics / Volume 58 / Issue 1 / April 2012
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- 29 March 2012, 10102
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- April 2012
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Experimental investigation of cathode current density distribution in vacuum arc based on ring-shaped electrode
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- The European Physical Journal - Applied Physics / Volume 58 / Issue 1 / April 2012
- Published online by Cambridge University Press:
- 23 March 2012, 10801
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- April 2012
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Effect of nanostructured morphologies of SnO2 on field emission properties
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- The European Physical Journal - Applied Physics / Volume 58 / Issue 1 / April 2012
- Published online by Cambridge University Press:
- 23 March 2012, 10401
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- April 2012
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The influence of pressure on the growth of InAlN/AlN/GaN heterostructure
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- The European Physical Journal - Applied Physics / Volume 57 / Issue 3 / February 2012
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- 01 March 2012, 30103
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- February 2012
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Low temperature characteristics of AlGaN/GaN high electron mobility transistors
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- The European Physical Journal - Applied Physics / Volume 56 / Issue 1 / October 2011
- Published online by Cambridge University Press:
- 28 September 2011, 10101
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- October 2011
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The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors
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- The European Physical Journal - Applied Physics / Volume 55 / Issue 3 / September 2011
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- 18 August 2011, 30104
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- September 2011
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The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure
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- The European Physical Journal - Applied Physics / Volume 55 / Issue 1 / July 2011
- Published online by Cambridge University Press:
- 21 July 2011, 10102
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- July 2011
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Observations on the autumn migration of Nilaparvata lugens (Homoptera: Delphacidae) and other pests in east central China
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- Bulletin of Entomological Research / Volume 84 / Issue 3 / September 1994
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- 10 July 2009, pp. 389-402
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Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
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- 13 June 2014, pp. 411-416
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- 1999
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Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
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- 15 February 2011, G3.76
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- 1998
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Solid State Amorphization in Silicide—Forming Systems
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- MRS Online Proceedings Library Archive / Volume 320 / 1993
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- 03 September 2012, 343
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- 1993
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Formation of Amorphous Interlayers by Solid-State Diffusion in Refractory Metal/Silicon Systems
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- MRS Online Proceedings Library Archive / Volume 187 / 1990
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- 21 February 2011, 77
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- 1990
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